PHOTOLUMINESCENCE OF AIIBVI MULTILAYER QUANTUM DOTS DOPED WITH MANGANESE (II) AND COPPER (I, II) IONS

doi: 10.25712/ASTU.2072-8921.2021.02.030

Abstract

Manganese (II) and copper (I, II) ions are popular doping impurities that can significantly modify the optical spectrum of a semiconductor matrix. In the literature, there are conflicting data on the effect of copper ions and the combined effect of copper and manganese ions on the photoluminescent properties of semiconductor quantum dots. The aim of this work is to obtain multilayer quantum dots based on zinc and cadmium sulfides, jointly doped with manganese and copper ions, fixed in a polymer matrix, and to study their photoluminescent properties. As a method for obtaining doped multilayer quantum dots, the method of colloidal synthesis was chosen, the solidification of colloidal solutions was carried out by radical thermal polymerization, and the effect of doping ions was evaluated by changes in the photoluminescence spectra. Based on the photoluminescence spectra, copper ions significantly change the emission properties of nanoparticles. Being in the crystal lattice of a semiconductor in both monovalent and divalent states, copper ions create numerous defects in the lattice and on the surface of semiconductors, which are effective photoluminescence centers. Externally, the effect of defects manifests itself in the broadening of the photoluminescence band associated with intrinsic defects of zinc sulfide, the appearance of a flat shoulder of this band, extending to the green region of the spectrum, and the almost complete disappearance of the photoluminescence band of cadmium sulfide. The photoluminescence associated with manganese ions does not appear in the recorded spectra.